DATA SHEET
PRELIMINARY DATA SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES
PACKAGE DIMENSIONS
•
High fT
(in milimeters)
+_
2.8 0.2
fT = 5.5 GHz TYP.
| S21e
2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA
+0.1
•
•
•
•
−
−
|
1.5
0.65
–0.15
High speed switching characteristics
Equivalent NPN transistor is the 2SC2351.
Alternative of the 2SA1424.
2
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
3
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCB0
VCE0
VEB0
IC
Rating
−20
Unit
V
Marking
−12
V
−3.0
V
−50
mA
mW
°C
°C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
200
Ti
150
Tstg
−65 to +150
PIN CONNECTIONS
1: Emitter
2: Base
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
3: Collector Marking: T93
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICB0
IEB0
hFE
Test Conditions
MIN.
TYP.
MAX.
−0.1
−0.1
100
Unit
µA
VCB = −10 V
VEB = −2 V
µA
VCE = −10 V, IC = −15 mA
VCE = −10 V, IC = −15 mA
20
40
5.5
0.5
10.0
2.0
Gain Bandwidth Product
Collector Capacitance
Insertion Power Gain
Noise Figure
fT
4.0
GHz
pF
Cre
*
VCB
=
−
10 V, IE = 0, f = 1 MHz
1
3
2
| S21e
NF
|
VCE = −10 V, IC = −15 mA, f = 1.0 GHz
VCE = −10 V, IC = −3.0 mA, f = 1 GHz
8.0
dB
dB
*
Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank
Marking
hFE
FB
T93
20 to 100
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996