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2SA1978

更新时间： 2024-11-24 22:52:39

品牌	Logo	应用领域
日电电子 - NEC		晶体微波放大器晶体管
页数	文件大小	规格书
10页	61K
描述
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

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中文翻译

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2SA1978 数据手册

DATA SHEET

PRELIMINARY DATA SHEET

Silicon Transistor

2SA1978

PNP EPITAXIAL SILICON TRANSISTOR

MICROWAVE AMPLIFIER

FEATURES

PACKAGE DIMENSIONS

•

High f_T

(in milimeters)

2.8 0.2

f_T= 5.5 GHz TYP.

| S_21e

²= 10.0 dB TYP. @f = 1.0 GHz, V_CE= 10 V, I_C= 15 mA

+0.1

•

−

1.5

0.65

–0.15

High speed switching characteristics

Equivalent NPN transistor is the 2SC2351.

Alternative of the 2SA1424.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CB0

V_CE0

V_EB0

I_C

Rating

−20

Unit

Marking

−12

−3.0

−50

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

P_T

200

T_i

150

T_stg

−65 to +150

PIN CONNECTIONS

1: Emitter

2: Base

ELECTRICAL CHARACTERISTICS (T_A= 25 °C)

3: Collector Marking: T93

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

I_CB0

I_EB0

h_FE

Test Conditions

MIN.

TYP.

MAX.

−0.1

100

Unit

µA

V_CB= −10 V

V_EB= −2 V

µA

V_CE= −10 V, I_C= −15 mA

5.5

0.5

10.0

2.0

Gain Bandwidth Product

Collector Capacitance

Insertion Power Gain

Noise Figure

f_T

4.0

GHz

C_re

V_CB

−

10 V, I_E= 0, f = 1 MHz

| S_21e

V_CE= −10 V, I_C= −15 mA, f = 1.0 GHz

V_CE= −10 V, I_C= −3.0 mA, f = 1 GHz

8.0

Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

h_FEClassification

Rank

Marking

h_FE

T93

20 to 100

Document No. P11028EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6 7...10

中文翻译

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