2SA1979SF
PNP Silicon Transistor
Description
PIN Connection
• Medium power amplifier
3
Features
• Large collector current : ICMax=-500mA
• Suitable for low-Voltage operation
because of its low saturation voltage
• Complementary pair with 2SC5342SF
1
2
SOT-23F
Ordering Information
Type NO.
Marking
AA □ □
Package Code
2SA1979SF
SOT-23F
①
② ③
①Device Code ②hFE Rank ③Year&Week Code
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-40
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
V
V
-32
-5
V
-500
200
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
IC=-100μA, IE=0
IC=-1mA, IB=0
-40
-32
-5
-
-
-
-
V
V
-
IE=-10μA, IC=0
-
-
-
V
VCB=-40V, IE=0
-0.1
-0.1
240
-0.25
-
μA
μA
-
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
*
DC current gain
hFE
VCE=-1V, IC=-100mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
70
-
-
Collector-Emitter saturation voltage
Transistor frequency
VCE(sat)
fT
-
V
-
200
7.5
MHz
pF
Collector output capacitance
Cob
-
-
*
: hFE rank / O : 70~140, Y : 120~240
KSD-T5C050-001
1