2SA1979
Semiconductor
PNP Silicon Transistor
Description
• Medium power amplifier
PIN Connection
E
Features
B
• Large collector current : ICMax=-500mA
• Suitable for low-Voltage operation because of
its low saturation voltage
C
• Complementary pair with 2SC5342
TO-92
Ordering Information
Type NO.
Marking
Package Code
2SA1979
A1979
TO-92
Absolute maximum ratings
Characteristic
Ta=25°C
Symbol
Ratings
-40
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
VCBO
VCEO
VEBO
IC
V
V
-32
-5
V
-500
500
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
Ta=25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
IC=-100μA, IE=0
-40
-32
-5
-
-
-
V
IC=-1mA, IB=0
-
-
V
IE=-10μA, IC=0
-
-
-
V
VCB=-40V, IE=0
-0.1
-0.1
240
-0.25
-
μA
μA
-
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
*
DC current gain
hFE
VCE=-1V, IC=-100mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
70
-
-
Collector-Emitter saturation voltage
Transistor frequency
VCE(sat)
fT
-
V
-
200
7.5
MHz
pF
Collector output capacitance
Cob
-
-
*
: hFE rank / O : 70~140, Y : 120~240
KSD-T0A028-000
1