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2SA1980E

更新时间： 2024-09-24 07:29:47

品牌	Logo	应用领域
可天士 - KODENSHI		放大器
页数	文件大小	规格书
4页	218K
描述
General small signal amplifier

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中文翻译

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2SA1980E 数据手册

2SA1980E

PNP Silicon Transistor

PIN Connection

Description

• General small signal amplifier

Features

• Low collector saturation voltage : V_CE(sat)=-0.3V(Max.)

• Low output capacitance : C_ob=4pF(Typ.)

• Complementary pair with 2SC5343E

SOT-523

Ordering Information

Type NO.

Marking

Package Code

2SA1980E

SOT-523

① ② ③

①Device Code ②hFE Rank ③Year&Week Code

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-50

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

-50

-5

-150

150

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_C=-100μA, I_E=0

I_C=-1mA, I_B=0

-50

-5

I_E=-10μA, I_C=0

V_CB=-50V, I_E=0

-0.1

700

-0.3

μA

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

DC current gain

h_FE

V_CE=-6V, I_C=-2mA

I_C=-100mA, I_B=-10mA

V_CE=-10V, I_C=-1mA

V_CB=-10V, I_E=0, f=1MHz

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

C_ob

V_CE=-6V, I_C=-0.1mA

f=1KHz, Rg=10KΩ

Noise figure

*: h_FErank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700

KSD-T5E007-000

12 3 4

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