Datasheet > 晶体管 > 小信号双极晶体管> 2SA1980-L-AP-HF

2SA1980-L-AP-HF

更新时间： 2024-02-13 03:53:23

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	207K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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2SA1980-L-AP-HF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.63
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2SA1980-L-AP-HF 数据手册

2SA1980-O

2SA1980-Y

2SA1980-G

2SA1980-L

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

ꢀꢁ Low Collector Saturation Voltage: V_CE(sat)=0.3V(Max.)

ꢀꢁ Low Output Capacitance: Cob=4.0pF(Typ.)

ꢀꢁ Complementary Pair With 2SC5343

ꢀꢁ Marking : A1980

PNP Silicon

Transistors

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Maximum Ratings

TO-92

Symbol

Rating

Unit

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

5.0

150

^OC

P_C

Collector power dissipation

Junction Temperature

Storage Temperature

625

T_J

150

T_STG

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Typ

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

(I_C=100uAdc, I_B=0)

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, I_B=0)

Emitter-Base Breakdown Voltage

(I_E=10uAdc, I_C=0)

Collector-Base Cutoff Current

(V_CB=50Vdc,I_E=0)

5.0

---

Vdc

---

Vdc

0.1

uAdc

I_EBO

Emitter-Base Cutoff Current

(V_EB=5.0Vdc, I_C=0)

---

ON CHARACTERISTICS

h_FE

V_CE(sat)

f_T

Forward Current Transfer ratio*

---

700

0.3

---

Vdc

MHz

(I_C=2.0Adc, V_CE=6.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=100mAdc, I_B=10mAdc)

Transition Frequency

DIMENSIONS

---

(V_CE=10Vdc, I_C=1.0mAdc)

Collector Output Capacitance

(V_CB=10Vdc, I_E=0, f=1.0MHz)

Noise Figure

INCHES

MIN

C_ob

4.0

7.0

DIM

MAX

.190

.590

.020

.160

.104

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.170

.550

.010

.130

.096

(V_CE=6.0Vdc, I_C=0.1mAdc,

f=1.0KHz, Rg=10KĀ)

---

* h_FErank / O: 70-140, Y:120-240, G:200-400, L:300-700

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Revision: A

2011/01/01

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