2SA1980-O
2SA1980-Y
2SA1980-G
2SA1980-L
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
ꢀꢁ Low Collector Saturation Voltage: VCE(sat)=0.3V(Max.)
ꢀꢁ Low Output Capacitance: Cob=4.0pF(Typ.)
ꢀꢁ Complementary Pair With 2SC5343
ꢀꢁ Marking : A1980
PNP Silicon
Transistors
·
·
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
TO-92
Symbol
Rating
Rating
50
Unit
V
A
E
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
50
V
5.0
V
B
150
mA
mW
OC
OC
PC
Collector power dissipation
Junction Temperature
Storage Temperature
625
TJ
150
TSTG
-55 to +150
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
C
Typ
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IB=0)
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
Collector-Base Cutoff Current
(VCB=50Vdc,IE=0)
50
50
5.0
---
---
---
---
---
---
---
---
Vdc
Vdc
---
Vdc
D
0.1
0.1
uAdc
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
---
ON CHARACTERISTICS
E
C
B
hFE
VCE(sat)
fT
Forward Current Transfer ratio*
70
---
80
---
---
---
700
0.3
---
---
Vdc
MHz
pF
G
(IC=2.0Adc, VCE=6.0Vdc)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
Transition Frequency
DIMENSIONS
---
(VCE=10Vdc, IC=1.0mAdc)
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
Noise Figure
INCHES
MIN
MM
Cob
4.0
7.0
DIM
A
B
C
D
MAX
.190
.190
.590
.020
.160
.104
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
.170
.170
.550
.010
.130
.096
NF
(VCE=6.0Vdc, IC=0.1mAdc,
f=1.0KHz, Rg=10KĀ)
---
---
10
dB
E
G
* hFE rank / O: 70-140, Y:120-240, G:200-400, L:300-700
www.mccsemi.com
1 of 2
Revision: A
2011/01/01