Datasheet > 2SA1980UF-L

2SA1980UF-L

更新时间： 2022-02-26 11:15:04

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1034K
描述
PNP Transistors

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数据手册

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2SA1980UF-L 数据手册

SMD Type

Transistors

PNP Transistors

2SA1980UF

■ Features

● Low collector saturation voltage

● Low output capacitance : C^ob=4pF(Typ.)

● Complements to 2SC5343UF

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-50

Unit

VCBO

VCEO

VEBO

-50

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-150

200

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA，I = 0

= -100μA， I

E=0

C=0

CBO

EBO

CB= -50V , I

EB= -5V , I

-0.1

-0.3

-1.2

700

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100mA, I

=-10mA

=-100mA, I

hFE

CE= -6V, I

CE=-6V, I

= -2mA

=-0.1mA f=1KHz, R

= 0,f=1MHz

= -1mA

Noise figure

=10KΩ

Collector output capacitance

Transition frequency

CB= -10V, I

^CE= -10V, I

MHz

■ Classification of hfe

Type

Range

Marking

2SA1980UF-O 2SA1980UF-Y 2SA1980UF-G

2SA1980UF-L

300-700

70-140

120-240

200-400

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