SMD Type
Transistors
PNP Transistors
2SA1980UF
■ Features
● Low collector saturation voltage
● Low output capacitance : Cob=4pF(Typ.)
● Complements to 2SC5343UF
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-50
Unit
V
VCBO
VCEO
VEBO
-50
-5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-150
200
mA
P
C
mW
T
J
150
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-50
-50
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
Ic= -1 mA,I = 0
= -100μA, I
E=0
B
I
E
C=0
I
CBO
EBO
V
V
CB= -50V , I
EB= -5V , I
E
=0
-0.1
-0.1
-0.3
-1.2
700
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-100mA, I
B
=-10mA
=-10mA
V
C
=-100mA, I
B
hFE
V
V
V
V
CE= -6V, I
CE=-6V, I
C
= -2mA
=-0.1mA f=1KHz, R
= 0,f=1MHz
= -1mA
70
Noise figure
NF
C
g
=10KΩ
10
7
dB
pF
Collector output capacitance
Transition frequency
C
ob
T
CB= -10V, I
CE= -10V, I
E
f
C
80
MHz
■ Classification of hfe
Type
Range
Marking
2SA1980UF-O 2SA1980UF-Y 2SA1980UF-G
2SA1980UF-L
300-700
CL
70-140
CO
120-240
CY
200-400
CG
1
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