Datasheet > 晶体管 > 其他晶体管> 2SA1979NO

2SA1979NO

更新时间： 2024-09-18 13:04:11

品牌	Logo	应用领域
可天士 - KODENSHI		晶体放大器小信号双极晶体管功率放大器
页数	文件大小	规格书
4页	230K
描述
Transistor,

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2SA1979NO 数据手册

2SA1979

Semiconductor

PNP Silicon Transistor

Description

• Medium power amplifier

PIN Connection

Features

• Large collector current : I_CMax=-500mA

• Suitable for low-Voltage operation because of

its low saturation voltage

• Complementary pair with 2SC5342

TO-92

Ordering Information

Type NO.

Marking

Package Code

2SA1979

A1979

TO-92

Absolute maximum ratings

Characteristic

Ta=25°C

Symbol

Ratings

-40

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

-32

-5

-500

500

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

Ta=25°C

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_C=-100μA, I_E=0

-40

-32

-5

I_C=-1mA, I_B=0

I_E=-10μA, I_C=0

V_CB=-40V, I_E=0

-0.1

240

-0.25

μA

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

DC current gain

h_FE

V_CE=-1V, I_C=-100mA

I_C=-100mA, I_B=-10mA

V_CE=-6V, I_C=-20mA

V_CB=-6V, I_E=0, f=1MHz

Collector-Emitter saturation voltage

Transistor frequency

V_CE(sat)

f_T

200

7.5

MHz

Collector output capacitance

C_ob

: h_FErank / O : 70~140, Y : 120~240

KSD-T0A028-000

12 3 4

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