Datasheet > 2SA1971_09

2SA1971_09

更新时间： 2022-09-16 17:15:09

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
4页	160K
描述
High-Voltage Switching Applications

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2SA1971_09 数据手册

2SA1971

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1971

High-Voltage Switching Applications

Unit: mm

•

High breakdown voltage: V

= −400 V

CEO

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−400

−7

Collector-emitter voltage

Emitter-base voltage

−0.5

−1

Collector current

Base current

Pulse

−0.25

500

Ta = 25°C

Collector power

dissipation

JEDEC

JEITA

―

1000

(Note 1)

Junction temperature

150

°C

TOSHIBA

2-5K1A

Storage temperature range

stg

−55 to 150

Weight: 0.05 g (typ.)

Note 1: Mounted on a ceramic substrate 250 mm²× 0.8 t

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4

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