Datasheet > 2SA1971_09

2SA1971_09

更新时间： 2024-10-28 07:29:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
4页	160K
描述
High-Voltage Switching Applications

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中文翻译

获取价格

数据手册

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2SA1971_09 数据手册

2SA1971

– V

I – V

C BE

−500

−400

−300

−500

−400

−100

−60

−40

−20

−10

−5

Common emitter

= −5 V

−80

−2

−300

−200

−100

−1

Ta = 100°C 25

−55

= −0.5 mA

−100

Common emitter

Ta = 25°C

−2

−4

−6

−8 −10 −12 −14 −16 −18 −20

−0.2

−0.4

−0.6

−0.8

−1

−1.2

Collector-emitter voltage

(V)

Collector-emitter voltage

(V)

– I

CE (sat) C

1000

−30

−10

Common emitter

500

300

100

/I = 10

C B

−5

−3

Ta = −55°C

100

−1

−0.5

−0.3

100

−0.1

Common emitter

= −5 V

Ta = −55°C

−100

−0.05

−0.03

−1

−10

−100

−1000

−1

−10

−1000

Collector current

(mA)

Collector current

(mA)

Safe Operating Area

−3000

−1000

300 μs*

max (pulsed)*

100 μs*

max (continuous)

10 μs*

−300

−100

100 ms*

10 ms*

– I

BE (sat)

−10

Common emitter

/I = 10

−5

−3

1 ms*

DC operation

Ta = 25°C

−30

−10

250 mm²× 0.8 t

Mounted on a

ceramic substrate

−1

−55

*: Single nonrepetitive

pulse Ta = 25°C

−0.5

−0.3

Ta = 100°C

Curves must be derated

linearly with increase in

temperature.

−3

−1

max

CEO

−0.1

−1

−3

−10

−30

−100

−300

−1000

−10

−100

−500

Collector current

(mA)

Collector-emitter voltage

(V)

2009-12-21

1 234

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与2SA1971_09相关器件

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2SA1972	TOSHIBA	获取价格	TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)
2SA1972_07	TOSHIBA	获取价格	High-Voltage Switching Applications
2SA1972_09	TOSHIBA	获取价格	High-Voltage Switching Applications
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2SA1977	RENESAS	获取价格	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
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