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2SA1963-1 PDF预览

2SA1963-1

更新时间: 2024-02-25 20:11:06
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 54K
描述
TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-236AB

2SA1963-1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.3 pF
集电极-发射极最大电压:8 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):5000 MHz

2SA1963-1 数据手册

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Ordering number:ENN5230  
PNP Epitaxial Planar Silicon Transistor  
2SA1963  
High-Frequency Low-Noise Amplifier,  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low noise : NF=1.5dB typ (f=1GHz).  
· High gain : | S2le |2=9dB typ (f=1GHz).  
· High cutoff frequency : f =5GHz typ.  
2018B  
T
[2SA1963]  
0.4  
0.16  
3
0 to 0.1  
0.95  
0.95  
2
1
1.9  
2.9  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : CP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
12  
Unit  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
8  
V
CEO  
V
2  
V
EBO  
I
50  
mA  
mW  
˚C  
˚C  
C
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
C
Tj  
200  
150  
Tstg  
55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
V
=10V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
1.0  
EBO  
C
h
=5V, I =10mA  
20*  
3
120*  
FE  
C
Gain-Bandwidth Product  
f
=5V, I =10mA  
5
0.8  
0.55  
9
GHz  
pF  
T
C
Output Capacitance  
C
V
V
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
1.3  
3.0  
ob  
CB  
CB  
CE  
CE  
CE  
Reverse Transfer Capacitance  
C
pF  
re  
| S2le |2(1)  
| S2le |2(2)  
NF  
=5V, I =10mA, f=1GHz  
7
dB  
dB  
dB  
C
Forward Transfer Gain  
Noise Figure  
=2V, I =3mA, f=1GHz  
6.5  
1.5  
C
=5V, I =5mA, f=1GHz  
C
* : The 2SA1963 is classified by 10mA h as follows :  
Marking : MS  
FE  
h
FE  
ranks : 1, 2, 3  
Rank  
1
2
3
h
20 to 50  
40 to 80  
60 to 120  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
91003TN (KT)/91098HA (KT)/83095 (KOTO) TA-0541 No.5230–1/5  

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