Datasheet > 2SA1963-1

2SA1963-1

更新时间： 2024-02-10 07:01:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	54K
描述
TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-236AB

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2SA1963-1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.84	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.05 A	基于收集器的最大容量：	1.3 pF
集电极-发射极最大电压：	8 V	配置：	SINGLE
最小直流电流增益 (hFE)：	20	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.2 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	5000 MHz

2SA1963-1 数据手册

2SA1963

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of September, 2003. Specifications and information herein are

subject to change without notice.

PS No.5230–5/5

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与2SA1963-1相关器件

型号	品牌	描述	获取价格	数据表
2SA1963-2	ONSEMI	TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-236AB	获取价格
2SA1963-3	ONSEMI	TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-236AB	获取价格
2SA1964	NJSEMI	Silicon PNP Power Transistor	获取价格
2SA1964	ROHM	For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)	获取价格
2SA1964D	ETC	BJT	获取价格
2SA1964E	ETC	BJT	获取价格

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