Datasheet > 2SA1971

2SA1971

更新时间： 2024-11-12 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
1页	106K
描述
High voltage: VCE = -400 V Collector-base voltage VCBO -400 V

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数据手册

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2SA1971 数据手册

SMD Type

Transistors

Product specification

2SA1971

Features

High voltage: V^CE= -400 V

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-400

Unit

-400

-7

-0.5

Collector current(pulse)

Base current

I^CP

-1

I^B

-0.25

500

Collector power dissipation

P^C

1000 *

150

Junction temperature

Storage temperature range

T^stg

-55 to +150

* Mounted on ceramic substrate (250 mm²X 0.8 t)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-10

-1

Unit

ìA

Collector cut-off current

Emitter cut-off current

V^CB=-400V, I^E=0

V^EB=-7V,I^C=0

Collector-emitter breakdown voltage

V^(BR)CEOIC=-10mA, IB=0

-400

140

V^CE=-5V,I^C=-20mA

h^FE

VCE=-5V,IC=-100mA

450

400

-1

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^{CE (sat)}I^C=-100mA,I^B=-10mA

V^{BE (sat)}I^C=-100mA,I^B=-10mA

-0.4

-0.76 -0.9

f^T

V^CE=-5V,I^C=-50mA

MHz

Collector output capacitance

C^ob

V^CB=-10V,I^E=0,f=1MHz

Turn-on time

t^on

0.2

ìs

Storage time

Fall time

t^stg

2.3

0.2

ìs

t^f

4008-318-123

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