2SA1962
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1962
Power Amplifier Applications
Unit: mm
•
•
•
High breakdown voltage: V
= −230 V (min)
CEO
Complementary to 2SC5242
Recommended for 80-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−230
−230
−5
V
V
V
A
A
Collector-emitter voltage
Emitter-base voltage
Collector current
I
−15
−1.5
C
Base current
I
B
Collector power dissipation
(Tc = 25°C)
P
130
W
C
JEDEC
JEITA
―
―
Junction temperature
Storage temperature range
T
150
°C
°C
j
T
stg
−55 to 150
TOSHIBA
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 4.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09