Datasheet > 2SA1962_07

2SA1962_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器功率放大器
页数	文件大小	规格书
6页	215K
描述
Power Amplifier Applications

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2SA1962_07 数据手册

March 2008

2SA1962/FJA4213

PNP Epitaxial Silicon Transistor

Applications

•

High-Fidelity Audio Output Amplifier

General Purpose Power Amplifier

Features

•

High Current Capability: I_C= -15A

High Power Dissipation : 130watts

High Frequency : 30MHz.

High Voltage : V_CEO= -230V

Wide S.O.A for reliable operation.

Excellent Gain Linearity for low THD.

Complement to 2SC5242/FJA4313.

Thermal and electrical Spice models are available.

Same transistor is also available in:

-- TO264 package, 2SA1943/FJL4215 : 150 watts

-- TO220 package, FJP1943 : 80 watts

-- TO220F package, FJPF1943 : 50 watts

TO-3P

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings*

T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

-230

-5

Units

BV_CBO

BV_CEO

BV_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-15

I_B

Base Current

-1.5

P_D

Total Device Dissipation(T_C=25°C)

Derate above 25°C

130

1.04

W/°C

T_J, T_STG

Junction and Storage Temperature

- 50 ~ +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T =25°C unless otherwise noted

Symbol

Parameter

Max.

Units

R_θJC

Thermal Resistance, Junction to Case

0.96

°C/W

* Device mounted on minimum pad size

Classification

h_FE1

55 ~ 110

80 ~ 160

2SA1962/FJA4213 Rev. A2

www.fairchildsemi.com

12 3 4 5 6

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