生命周期: | Transferred | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.34 |
最大集电极电流 (IC): | 0.3 A | 基于收集器的最大容量: | 4 pF |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1300 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1960RR | RENESAS |
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Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN | |
2SA1960TZ | RENESAS |
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RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-92 | |
2SA1961 | PANASONIC |
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Silicon PNP epitaxial planer type | |
2SA1961P | PANASONIC |
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Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, MT2, | |
2SA1961Q | ETC |
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TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-71 | |
2SA1962 | TOSHIBA |
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TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |
2SA1962 | JMNIC |
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Silicon PNP Power Transistors | |
2SA1962 | FAIRCHILD |
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PNP Epitaxial Silicon Transistor | |
2SA1962 | ISC |
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isc Silicon PNP Power Transistor | |
2SA1962 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors |