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2SA1962

更新时间： 2024-09-15 06:18:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	110K
描述
isc Silicon PNP Power Transistor

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数据手册

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2SA1962 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1962

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -230V(Min)

·Good Linearity of h_FE

·Complement to Type 2SC5242

APPLICATIONS

·Power amplifier applications

·Recommend for 80W high fidelity audio frequency

amplifier output stage applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-230

-5

UNIT

Collector Current-Continuous

Base Current-Continuous

-15

I_B

-1.5

Collector Power Dissipation

@ T_C=25℃

P_C

130

℃

T_J

Junction Temperature

150

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

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与2SA1962相关器件

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2SA1962_07	FAIRCHILD	获取价格	Power Amplifier Applications
2SA1962O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 230V V(BR)CEO \| 15A I(C) \| TO-247VAR
2SA1962-O	TOSHIBA	获取价格	Power Amplifier Applications
2SA1962O(Q)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,230V V(BR)CEO,15A I(C),TO-247VAR
2SA1962OTU	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor
2SA1962OTU	ONSEMI	获取价格	PNP外延硅晶体管
2SA1962R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 230V V(BR)CEO \| 15A I(C) \| TO-247VAR
2SA1962-R	TOSHIBA	获取价格	TRANSISTOR 15 A, 230 V, PNP, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Pow
2SA1962R(Q)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,230V V(BR)CEO,15A I(C),TO-247VAR
2SA1962RTU	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor