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2SA1955-B PDF预览

2SA1955-B

更新时间: 2024-11-12 19:52:39
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 143K
描述
TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purpose Small Signal

2SA1955-B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.45最大集电极电流 (IC):0.4 A
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):500JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

2SA1955-B 数据手册

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2SA1955  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1955  
General Purpose Amplifier Applications  
Switching and Muting Switch Application  
Unit: mm  
·
·
Low saturation voltage: V  
(1) = 15 mV (typ.)  
@I = 10 mA/I = 0.5 mA  
CE (sat)  
C
B
Large collector current: I = 400 mA (max)  
C
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
-15  
-12  
V
V
CBO  
CEO  
EBO  
-5  
V
I
-400  
-50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
125  
j
JEDEC  
JEITA  
T
-55~125  
stg  
TOSHIBA  
2-2H1A  
Marking  
Weight: 2.4 mg (typ.)  
1
2003-03-27  

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