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2SA1958 PDF预览

2SA1958

更新时间: 2024-11-11 23:20:03
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2SA1958 数据手册

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2SA1958  
Silicon PNP Epitaxial  
Application  
TO–126FM  
High frequency amplifier  
Features  
• Excellent high frequency characteristics  
f = 500 MHz typ  
T
• High voltage and low output capacitance  
V
= -150 V, Cob = 5.0 pF typ  
CEO  
• Suitable for wide band video amplifier  
• Complementary pair with 2SC5120  
1
2
3
1. Emitter  
2. Collector  
3. Base  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Collector to base voltage  
V
–150  
V
CBO  
———————————————————————————————————————————  
Collector to emitter voltage  
V
–150  
V
CEO  
———————————————————————————————————————————  
Emitter to base voltage  
V
–3  
V
EBO  
———————————————————————————————————————————  
Collector current  
I
–0.2  
A
C
———————————————————————————————————————————  
Collector peak current  
ic(peak)  
–0.4  
A
———————————————————————————————————————————  
Collector power dissipation  
P
1.4  
W
C
—————  
8*1  
———————————————————————————————————————————  
Junction temperature  
Tj  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
Note: 1. Tc = 25°C  

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