Datasheet > 2SA1955_07

2SA1955_07

更新时间： 2024-11-12 04:25:51

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器
页数	文件大小	规格书
5页	438K
描述
General Purpose Amplifier Applications Switching and Muting Switch Application

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2SA1955_07 数据手册

2SA1955

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1955

General Purpose Amplifier Applications

Unit: mm

Switching and Muting Switch Application

•

Low saturation voltage: V

(1) = −15 mV (typ.)

CE (sat)

@I = −10 mA/I = −0.5 mA

Large collector current: I = −400 mA (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−15

−12

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−400

−50

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

JEDEC

JEITA

―

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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