5秒后页面跳转
2N7336PBF PDF预览

2N7336PBF

更新时间: 2024-10-28 12:58:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 444K
描述
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB

2N7336PBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-CDIP-T14Reach Compliance Code:compliant
风险等级:5.64Is Samacsys:N
雪崩能效等级(Eas):75 mJ配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):1 A
最大漏源导通电阻:0.7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-036ABJESD-30 代码:R-CDIP-T14
元件数量:4端子数量:14
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):4 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7336PBF 数据手册

 浏览型号2N7336PBF的Datasheet PDF文件第1页浏览型号2N7336PBF的Datasheet PDF文件第3页浏览型号2N7336PBF的Datasheet PDF文件第4页浏览型号2N7336PBF的Datasheet PDF文件第5页浏览型号2N7336PBF的Datasheet PDF文件第6页浏览型号2N7336PBF的Datasheet PDF文件第7页 
IRFG6110  
Electrical Characteristics For Each N-Channel Device@ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
Drain-to-Source Breakdown Voltage  
100  
V
V
= 0V, I = 1.0mA  
D
DSS  
GS  
V/°C Reference to 25°C, I = 1.0mA  
BV  
/T Temperature Coefficient of Breakdown  
0.13  
DSS  
J
D
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
2.0  
0.86  
0.7  
0.8  
4.0  
V
V
= 10V, I = 0.6A  
Ã
D
DS(on)  
GS  
GS  
= 10V, I = 1.0A  
D
V
g
V
S
V
= V , I = 250µA  
GS(th)  
fs  
DS  
GS  
D
V
> 15V, I  
= 0.6A Ã  
DS  
V
DS  
I
25  
250  
= 80V, V = 0V  
DSS  
DS GS  
µA  
V
= 80V,  
DS  
= 0V, T =125°C  
V
V
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Total Inductance  
10  
100  
-100  
15  
7.5  
7.5  
20  
25  
40  
40  
V
= 20V  
GSS  
GSS  
GS  
nA  
nC  
V
GS  
= -20V  
Q
Q
Q
=10V, I = 1.0A,  
g
gs  
gd  
d(on)  
r
GS  
D
V
DS  
= 50V  
t
t
t
t
V
DD  
= 50V, I = 1.0A,  
D
V
=10V, R = 7.5Ω  
GS G  
ns  
d(off)  
f
L
S
+ L  
nH  
D
Measured from drain lead (6mm/  
0.25in. from package) to source  
lead (6mm/0.25in. from package)  
C
C
C
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
180  
82  
15  
V
= 0V, V  
= 25V  
f = 1.0MHz  
iss  
oss  
rss  
GS DS  
pF  
Source-Drain Diode Ratings and Characteristics (Per Die)  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
V
t
Q
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) À  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
1.0  
4.0  
1.5  
200  
S
SM  
SD  
rr  
A
V
nS  
T = 25°C, I = 1.0A, V  
= 0V Ã  
j
S
GS  
T = 25°C, I = 1.0A, di/dt 100A/µs  
j
F
0.83 nC  
V
50V Ã  
RR  
DD  
t
on  
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
Thermal Resistance (Per Die)  
Parameter  
Min Typ Max Units  
Test Conditions  
R
thJC  
R
thJA  
Junction-to-Case  
Junction-to-Ambient  
17  
90  
°C/W  
Typical socket mount  
Note: Corresponding Spice and Saber models are available on International Rectifier Website.  
For footnotes, refer to the last page  
2
www.irf.com  

与2N7336PBF相关器件

型号 品牌 获取价格 描述 数据表
2N735 ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
2N735A ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
2N736 ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
2N7368 MICROSEMI

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal
2N7368JAN MICROSEMI

获取价格

NPN HIGH POWER SILICON TRANSISTOR
2N7368JANTX MICROSEMI

获取价格

NPN HIGH POWER SILICON TRANSISTOR
2N7368JANTXV MICROSEMI

获取价格

NPN HIGH POWER SILICON TRANSISTOR
2N7369 MICROSEMI

获取价格

PNP HIGH POWER SILICON TRANSISTOR
2N7369JAN MICROSEMI

获取价格

PNP HIGH POWER SILICON TRANSISTOR
2N7369JANTX MICROSEMI

获取价格

PNP HIGH POWER SILICON TRANSISTOR