生命周期: | Obsolete | 包装说明: | HERMETIC SEALED PACKAGE-3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JEDEC-95代码: | TO-257 | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7376 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal, | |
2N7377 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal, | |
2N7377E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal, | |
2N738 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 | |
2N7380 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me | |
2N7382 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met | |
2N7389 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me | |
2N7389U | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me | |
2N739 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 | |
2N7394 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta |