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2N7375E3 PDF预览

2N7375E3

更新时间: 2024-10-28 19:07:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
1页 71K
描述
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3 Pin, HERMETIC SEALED PACKAGE-3

2N7375E3 技术参数

生命周期:Obsolete包装说明:HERMETIC SEALED PACKAGE-3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-257JESD-30 代码:R-MSFM-P3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

2N7375E3 数据手册

  

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