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2N7368JANTX PDF预览

2N7368JANTX

更新时间: 2024-10-27 21:55:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管高功率电源
页数 文件大小 规格书
2页 56K
描述
NPN HIGH POWER SILICON TRANSISTOR

2N7368JANTX 数据手册

 浏览型号2N7368JANTX的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 622  
Devices  
Qualified Level  
JAN  
2N7368  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IB  
Value  
80  
Units  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
80  
7.0  
4.0  
10  
Collector Current  
IC  
Total Power Dissipation  
@ TC = 250C (1)  
115  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
0C  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 0.657 W/0C for TC > 250C  
TO-254*  
Symbol  
Max.  
1.5  
Unit  
0C/W  
R
qJC  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 0.2 Adc  
Collector-Emitter Cutoff Current  
VCE = 70 Vdc  
Collector-Emitter Cutoff Current  
VCE = 80 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
80  
Vdc  
VCEO sus  
(
ICES  
ICEX  
IEBO  
)
1.0  
1.0  
1.0  
mAdc  
mAdc  
mAdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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