Datasheet > 2N7373_1

2N7373_1

更新时间： 2024-11-07 07:29:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
3页	160K
描述
NPN POWER SILICON SWITCHING TRANSISTOR

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中文翻译

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数据手册

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2N7373_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/613

DEVICES

LEVELS

JAN

JANTX

JANTXV

JANS

2N7373

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

100

5.0

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽²⁾

4.0

P_T

Operating & Storage Junction Temperature Range

Thermal Resistance, Junction-to Case

T_j, T_stg

R_θJC

-65 to +200

°C

TO-254AA

°C/W

1) Derate linearly 22.8mW/°C for T_A> 25°C

2) Derate linearly 331mW/°C for T_C> 25°C

PIN 1 = BASE

PIN 2 = COLLECTOR

PIN 3 = EMITTER

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERISTICS

Symbol

Min.

Max.

Unit

SEE FIGURE 1

Collector-Emitter Breakdown Voltage

I_C= 100mAdc

V_(BR)CEO

Vdc

Collector-Emitter Cutoff Current

V_CE= 60Vdc, V_BE= 0Vdc

I_CES1

I_CES2

1.0

µAdc

mAdc

V_CE= 100Vdc, V_BE= 0Vdc

Collector-Emitter Cutoff Current

_CE= 40Vdc, I_B= 0

I_CEO

µAdc

Emitter-Base Cutoff Current

_EB= 4.0Vdc

V_EB= 5.5Vdc

I_EBO1

I_EBO2

1.0

µAdc

mAdc

T4-LDS-0046 Rev. 3 (091477)

Page 1 of 3

12 3

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