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2N7373_1 PDF预览

2N7373_1

更新时间: 2024-10-28 07:29:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
页数 文件大小 规格书
3页 160K
描述
NPN POWER SILICON SWITCHING TRANSISTOR

2N7373_1 数据手册

 浏览型号2N7373_1的Datasheet PDF文件第2页浏览型号2N7373_1的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/613  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
JANS  
2N7373  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
100  
5.0  
5.0  
Total Power Dissipation  
@ TA = +25°C (1)  
@ TC = +25°C (2)  
4.0  
58  
PT  
W
Operating & Storage Junction Temperature Range  
Thermal Resistance, Junction-to Case  
Tj , Tstg  
RθJC  
-65 to +200  
3
°C  
TO-254AA  
°C/W  
1) Derate linearly 22.8mW/°C for TA > 25°C  
2) Derate linearly 331mW/°C for TC > 25°C  
PIN 1 = BASE  
PIN 2 = COLLECTOR  
PIN 3 = EMITTER  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
SEE FIGURE 1  
Collector-Emitter Breakdown Voltage  
IC = 100mAdc  
V(BR)CEO  
80  
Vdc  
Collector-Emitter Cutoff Current  
VCE = 60Vdc, VBE = 0Vdc  
ICES1  
ICES2  
1.0  
1.0  
µAdc  
mAdc  
VCE = 100Vdc, VBE = 0Vdc  
Collector-Emitter Cutoff Current  
CE = 40Vdc, IB = 0  
ICEO  
50  
µAdc  
V
Emitter-Base Cutoff Current  
EB = 4.0Vdc  
VEB = 5.5Vdc  
IEBO1  
IEBO2  
1.0  
1.0  
µAdc  
mAdc  
V
T4-LDS-0046 Rev. 3 (091477)  
Page 1 of 3  

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