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2N7373

更新时间： 2024-11-27 22:35:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
3页 60K
描述
Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages

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中文翻译

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2N7373 数据手册

 浏览型号2N7373的Datasheet PDF文件第2页浏览型号2N7373的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
2N7372 - PNP  
2N7373 - NPN  
APPLICATIONS:  
·
·
Power Supply  
Inverters and Converters  
·
General Purpose Amplifiers  
Complimentary  
Power Transistors  
in Hermetic Isolated  
TO-254AA Packages  
FEATURES:  
·
·
·
·
Planar Process for Reliability  
Fast Switching  
High-Frequency Power Transistors  
For Complementary Use with Each Other  
·
15 mj Reverse Energy Rating with I = 10MA and 4 V Reverse Bias  
C
JAN/TX/TXV/JANS  
·
·
·
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package  
Leads can be Formed  
All Terminals Isolated from the Case  
DESCRIPTION:  
These power transistors are produced by PPC's MULTIPLE DIFFUSED  
PLANAR process. This technology produces high voltage devices with  
excellent switching speeds, frequency response, gain linearity, saturation  
voltages, high current gain, and safe operating areas. These devices have  
excellent unclamped and clamped reverse energy ratings with the base to  
emitter reversed biased.  
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to  
permit operating temperature to 200°C. The hermetically sealed package  
insures maximum reliability and long life. The isolated low profile package  
allows for easy PC board fit.  
TO-254AA  
ABSOLUTE MAXIMUM RATINGS:  
SYMBOL  
CHARACTERISTIC  
2N7372  
2N7373  
UNITS  
V
Collector-Base Voltage  
- 100  
- 80  
- 5.5  
5
100  
80  
5.5  
5
V
CBO  
V
V
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
I
C
Continuous Collector Current  
Peak Collector Current  
A
A
A
°C  
I
C
10  
10  
2
I
B
Continuous Base Current  
2
T
Storage Temperature  
-65 to 200  
-65 to 200  
300  
STG  
T
J
Operating Junction Temperature  
Lead Temperature 1/16" from cast for 10 sec.  
Unclamped Inductive Load Energy  
°C  
°C  
mj  
15  
P
T
Continuous Device  
Dissipation TC = 25°C  
TC = 100°C  
58  
33  
3
58  
33  
3
W
W
qJC  
Thermal Resistance Junction to Case  
°C/W  
MSC1343.PDF 010-29-99  
123

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2N7374 MICROSEMI

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2N7375E3 MICROSEMI

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 		Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal,
2N7376 MICROSEMI

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 		Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal,
2N7377 MICROSEMI

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 		Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal,
2N7377E3 MICROSEMI

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 		Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal,
2N738 ETC

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 		TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18
2N7380 MICROSEMI

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 		Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me

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