2N7373

更新时间： 2024-02-03 23:08:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
3页	60K
描述
Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages

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数据手册

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2N7373 数据手册

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

2N7372 - PNP

2N7373 - NPN

APPLICATIONS:

Power Supply

Inverters and Converters

General Purpose Amplifiers

Complimentary

Power Transistors

in Hermetic Isolated

TO-254AA Packages

FEATURES:

Planar Process for Reliability

Fast Switching

High-Frequency Power Transistors

For Complementary Use with Each Other

15 mj Reverse Energy Rating with I = 10MA and 4 V Reverse Bias

JAN/TX/TXV/JANS

Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package

Leads can be Formed

All Terminals Isolated from the Case

DESCRIPTION:

These power transistors are produced by PPC's MULTIPLE DIFFUSED

PLANAR process. This technology produces high voltage devices with

excellent switching speeds, frequency response, gain linearity, saturation

voltages, high current gain, and safe operating areas. These devices have

excellent unclamped and clamped reverse energy ratings with the base to

emitter reversed biased.

Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to

permit operating temperature to 200°C. The hermetically sealed package

insures maximum reliability and long life. The isolated low profile package

allows for easy PC board fit.

TO-254AA

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

2N7372

2N7373

UNITS

Collector-Base Voltage

- 100

- 80

- 5.5

100

5.5

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

°C

Continuous Base Current

Storage Temperature

-65 to 200

300

STG

Operating Junction Temperature

Lead Temperature 1/16" from cast for 10 sec.

Unclamped Inductive Load Energy

°C

Continuous Device

Dissipation T_C= 25°C

T_C= 100°C

qJC

Thermal Resistance Junction to Case

°C/W

MSC1343.PDF 010-29-99

12 3

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与2N7373相关器件

型号	品牌	描述	获取价格	数据表
2N7373_1	MICROSEMI	NPN POWER SILICON SWITCHING TRANSISTOR	获取价格
2N7374	MICROSEMI	Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal,	获取价格
2N7374E3	MICROSEMI	Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal,	获取价格
2N7375	MICROSEMI	Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal,	获取价格
2N7375E3	MICROSEMI	Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal,	获取价格
2N7376	MICROSEMI	Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal,	获取价格