型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7373_1 | MICROSEMI |
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NPN POWER SILICON SWITCHING TRANSISTOR | |
2N7374 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, | |
2N7374E3 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, | |
2N7375 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, | |
2N7375E3 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, | |
2N7376 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal, | |
2N7377 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal, | |
2N7377E3 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-254, Metal, | |
2N738 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 | |
2N7380 | MICROSEMI |
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Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me |