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2N7371 PDF预览

2N7371

更新时间: 2024-09-16 21:53:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管局域网高功率电源
页数 文件大小 规格书
2页 52K
描述
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

2N7371 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, R-MSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.23最大集电极电流 (IC):12 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):150JEDEC-95代码:TO-254AA
JESD-30 代码:R-MSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

2N7371 数据手册

 浏览型号2N7371的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 623  
Devices  
Qualified Level  
JAN, JANTX  
JANTXV  
2N7371  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
Symbol  
VCEO  
VCBO  
VEBO  
IB  
Value  
100  
100  
5.0  
Units  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
0.2  
12  
Collector Current  
Total Power Dissipation @ TC = +250C (1)  
IC  
100  
PT  
Operating & Storage Junction Temperature Range  
-65 to +175  
0C  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
TO-254AA*  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 0.667 W/0C above TC > +250C  
1.5  
R
qJC  
*See Appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
100  
Vdc  
VCEO sus  
(
)
Collector-Emitter Cutoff Current  
VCE = 50 Vdc  
Collector-Emitter Cutoff Current  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 5.0 Vdc  
1.0  
0.5  
2.0  
mAdc  
mAdc  
mAdc  
ICEO  
ICEX  
IEBO  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N7371 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N7371 MICROSEMI

类似代替

PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
JAN2N7371 MICROSEMI

类似代替

PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
JANTXV2N7371 MICROSEMI

功能相似

PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

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