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2N7372 PDF预览

2N7372

更新时间： 2024-09-16 22:35:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
3页 60K
描述
Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages

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中文翻译

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2N7372 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.17
Is Samacsys：N其他特性：HIGH RELIABILITY
外壳连接：ISOLATED最大集电极电流 (IC)：5 A
集电极-发射极最大电压：80 V配置：SINGLE
最小直流电流增益 (hFE)：40JEDEC-95代码：TO-254AA
JESD-30 代码：S-MSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：200 °C封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：33 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2N7372 数据手册

 浏览型号2N7372的Datasheet PDF文件第2页浏览型号2N7372的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
2N7372 - PNP  
2N7373 - NPN  
APPLICATIONS:  
·
·
Power Supply  
Inverters and Converters  
·
General Purpose Amplifiers  
Complimentary  
Power Transistors  
in Hermetic Isolated  
TO-254AA Packages  
FEATURES:  
·
·
·
·
Planar Process for Reliability  
Fast Switching  
High-Frequency Power Transistors  
For Complementary Use with Each Other  
·
15 mj Reverse Energy Rating with I = 10MA and 4 V Reverse Bias  
C
JAN/TX/TXV/JANS  
·
·
·
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package  
Leads can be Formed  
All Terminals Isolated from the Case  
DESCRIPTION:  
These power transistors are produced by PPC's MULTIPLE DIFFUSED  
PLANAR process. This technology produces high voltage devices with  
excellent switching speeds, frequency response, gain linearity, saturation  
voltages, high current gain, and safe operating areas. These devices have  
excellent unclamped and clamped reverse energy ratings with the base to  
emitter reversed biased.  
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to  
permit operating temperature to 200°C. The hermetically sealed package  
insures maximum reliability and long life. The isolated low profile package  
allows for easy PC board fit.  
TO-254AA  
ABSOLUTE MAXIMUM RATINGS:  
SYMBOL  
CHARACTERISTIC  
2N7372  
2N7373  
UNITS  
V
Collector-Base Voltage  
- 100  
- 80  
- 5.5  
5
100  
80  
5.5  
5
V
CBO  
V
V
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
I
C
Continuous Collector Current  
Peak Collector Current  
A
A
A
°C  
I
C
10  
10  
2
I
B
Continuous Base Current  
2
T
Storage Temperature  
-65 to 200  
-65 to 200  
300  
STG  
T
J
Operating Junction Temperature  
Lead Temperature 1/16" from cast for 10 sec.  
Unclamped Inductive Load Energy  
°C  
°C  
mj  
15  
P
T
Continuous Device  
Dissipation TC = 25°C  
TC = 100°C  
58  
33  
3
58  
33  
3
W
W
qJC  
Thermal Resistance Junction to Case  
°C/W  
MSC1343.PDF 010-29-99  
123

中文翻译

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2N7372 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N7372 MICROSEMI

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 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal,
JANS2N7372 MICROSEMI

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 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal,

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