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JANTXV2N7372 PDF预览

JANTXV2N7372

更新时间: 2024-11-25 20:15:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网开关晶体管
页数 文件大小 规格书
2页 96K
描述
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, 3 Pin, TO-254AA, 3 PIN

JANTXV2N7372 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-MSFM-P3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.22
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-254AA
JESD-30 代码:S-MSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Qualified参考标准:MIL
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANTXV2N7372 数据手册

 浏览型号JANTXV2N7372的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PNP POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/612  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
JANS  
2N7372  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
100  
5.5  
5.0  
Total Power Dissipation  
@ TA = +25°C (1)  
@ TC = +25°C (2)  
4.0  
58  
PT  
W
TO-254AA  
Operating & Storage Junction Temperature Range  
Thermal Resistance, Junction-to Case  
Tj , Tstg  
RθJC  
-65 to +200  
3
°C  
PIN 1 = BASE  
PIN 2 = COLLECTOR  
PIN 3 = EMITTER  
°C/W  
1) Derate linearly 22.8mW/°C for TA > 25°C  
2) Derate linearly 331mW/°C for TC > 25°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 100mAdc  
V(BR)CEO  
80  
Vdc  
Collector-Emitter Cutoff Current  
VCE = 60Vdc, VBE = 0Vdc  
ICES1  
ICES2  
1.0  
1.0  
µAdc  
mAdc  
VCE = 100Vdc, VBE = 0Vdc  
Collector-Emitter Cutoff Current  
CE = 40Vdc, IB = 0  
ICEO  
50  
µAdc  
V
Emitter-Base Cutoff Current  
EB = 4.0Vdc  
VEB = 5.5Vdc  
IEBO1  
IEBO2  
1.0  
1.0  
µAdc  
mAdc  
V
T4-LDS-0045 Rev. 1 (072805)  
Page 1 of 2  

JANTXV2N7372 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N7372 MICROSEMI

类似代替

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal,
JANS2N7372 MICROSEMI

功能相似

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal,

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