JANTXV2N918

更新时间： 2024-09-23 12:29:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	186K
描述
NPN LOW POWER SILICON TRANSISTOR

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中文翻译

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数据手册

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JANTXV2N918 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/301

DEVICES

LEVELS

JAN

2N918

2N918UB

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

Value

Unit

V_CEO

V_CBO

V_EBO

I_C

Vdc

mAdc

°C

Collector-Base Voltage

3.0

Emitter-Base Voltage

Collector Current

Total Power Dissipation @ T_A= +25°C ⁽¹⁾

P_T

200

Operating & Storage Junction Temperature Range

T_op& T_stg

-65 to +200

TO-72

2N918

Note: 1) Derate linearly 1.14mW/°C above T_A> 25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 3mAdc

V_(BR)CEO

Vdc

Collector-Base Cutoff Current

V_CB= 30Vdc

µAdc

ηAdc

µAdc

1.0

I_CBO

_CB= 25Vdc

_CB= 25Vdc; T_A= +150°C

3 PIN

2N918UB

Emitter-Base Cutoff Current

V_EB= 3.0Vdc

V_EB= 2.5Vdc

µAdc

ηAdc

I_EBO

Forward-Current Transfer Ratio

I_C= 0.5mAdc, V_CE= 10Vdc

I_C= 3.0mAdc, V_CE= 1.0Vdc

I_C= 10mAdc, V_CE= 10Vdc

h_FE

200

I_C= 3.0mAdc, V_CE= 1.0Vdc; T_A= -55°C

Collector-Emitter Saturation Voltage

I_C= 10mAdc, I_B= 1.0mAdc

V_CE(sat)

V_BE(sat)

0.4

1.0

Vdc

Base-Emitter Voltage

I_C= 10mAdc, I_B= 1.0mAdc

T4-LDS-0010 Rev. 3 (101342)

Page 1 of 4

12 3 4

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与JANTXV2N918相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N918UB	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JANTXV2N930	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 30MA I(C) \| TO-18
JANTXV2N930UB	ETC	获取价格	BJT
JANTXV3890A	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JANTXV3890AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JANTXV3891A	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JANTXV3891AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JANTXV3893AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JANTXV3FF05	SEMTECH	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 50V V(RRM), Silicon, HERMETIC SEALED, G102, 2 P
JANTXV3FF10	SEMTECH	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 100V V(RRM), Silicon, HERMETIC SEALED, G102, 2