型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N7434 | INFINEON |
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Power Field-Effect Transistor, 31A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide | |
JANTXV2N918 | MOTOROLA |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
JANTXV2N918 | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR | |
JANTXV2N918UB | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR | |
JANTXV2N930 | ETC |
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TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 30MA I(C) | TO-18 | |
JANTXV2N930UB | ETC |
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BJT | |
JANTXV3890A | MICROSEMI |
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Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTXV3890AR | MICROSEMI |
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Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTXV3891A | MICROSEMI |
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Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTXV3891AR | MICROSEMI |
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Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN |