是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-CDIP-T14 | Reach Compliance Code: | compliant |
风险等级: | 5.64 | Is Samacsys: | N |
雪崩能效等级(Eas): | 75 mJ | 配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 1 A |
最大漏源导通电阻: | 0.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-036AB | JESD-30 代码: | R-CDIP-T14 |
元件数量: | 4 | 端子数量: | 14 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 4 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N735 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 | |
2N735A | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 | |
2N736 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 | |
2N7368 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal | |
2N7368JAN | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
2N7368JANTX | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
2N7368JANTXV | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
2N7369 | MICROSEMI |
获取价格 |
PNP HIGH POWER SILICON TRANSISTOR | |
2N7369JAN | MICROSEMI |
获取价格 |
PNP HIGH POWER SILICON TRANSISTOR | |
2N7369JANTX | MICROSEMI |
获取价格 |
PNP HIGH POWER SILICON TRANSISTOR |