2N7002K
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
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Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (mA)
Definition
2 at VGS = 10 V
60
300
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Low On-Resistance: 2 Ω
Low Threshold: 2 V (typ.)
Low Input Capacitance: 25 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
TrenchFET® Power MOSFET
2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
TO-236
SOT-23
BENEFITS
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Low Offset Voltage
G
S
1
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
3
D
2
APPLICATIONS
Top View
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Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
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2N7002K (7K)*
* Marking Code
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Battery Operated Systems
Solid-State Relays
Ordering Information: 2N7002K-T1
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
60
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
20
TA = 25 °C
300
Continuous Drain Current (TJ = 150 °C)b
Pulsed Drain Currenta
ID
TA = 100 °C
190
mA
W
IDM
PD
800
TA = 25 °C
0.35
0.14
350
Power Dissipationb
TA = 100 °C
Maximum Junction-to-Ambientb
°C/W
°C
RthJA
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71333
S09-0857-Rev. E, 18-May-09
www.vishay.com
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