Datasheet > 2N7002K-T1

2N7002K-T1

更新时间： 2024-11-18 12:52:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	219K
描述
N-Channel 60-V (D-S) MOSFET

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2N7002K-T1 数据手册

2N7002K

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(mA)

Definition

2 at V_GS= 10 V

300

•

Low On-Resistance: 2 Ω

Low Threshold: 2 V (typ.)

Low Input Capacitance: 25 pF

Fast Switching Speed: 25 ns

Low Input and Output Leakage

TrenchFET^®Power MOSFET

2000 V ESD Protection

• Compliant to RoHS Directive 2002/95/EC

TO-236

SOT-23

BENEFITS

•

Low Offset Voltage

Low-Voltage Operation

Easily Driven Without Buffer

High-Speed Circuits

Low Error Voltage

APPLICATIONS

Top View

•

Direct Logic-Level Interface: TTL/CMOS

Drivers: Relays, Solenoids, Lamps, Hammers, Display,

Memories, Transistors, etc.

•

2N7002K (7K)*

* Marking Code

•

Battery Operated Systems

Solid-State Relays

Ordering Information: 2N7002K-T1

2N7002K-T1-E3 (Lead (Pb)-free)

2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

T_A= 25 °C

300

Continuous Drain Current (T_J= 150 °C)^b

Pulsed Drain Current^a

I_D

T_A= 100 °C

190

I_DM

P_D

800

T_A= 25 °C

0.35

0.14

350

Power Dissipation^b

T_A= 100 °C

Maximum Junction-to-Ambient^b

°C/W

°C

R_thJA

T_J,T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71333

S09-0857-Rev. E, 18-May-09

www.vishay.com

12 3 4 5 6 7...9

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