2N7002KTB
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3
• RDS(ON), VGS@4.5V,IDS@200mA=4
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
0.052(1.30)
0.043(1.10)
0.024(0.60)
0.019(0.50)
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.067(1.70)
0.059(1.50)
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.007(0.17)
0.002(0.07)
MECHANICAL DATA
• Case: SOT-523 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.00007 ounces, 0.002 grams
• Marking : 27
0.012(0.30)
0.004(0.10)
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol
VDS
Limit
Units
V
Drain-Source Voltage
Gate-Source Voltage
60
VGS
ID
+20
115
800
V
mA
Continuous Drain Current
1)
Pulsed Drain Current
IDM
mA
TA=25OC
TA=75OC
200
150
Maximum Power Dissipation
PD
mW
OC
Operating Junction and Storage Temperature Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
TJ,TSTG
RJA
-55 to + 150
883
OC/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
July 20,2012-REV.02
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