Datasheet > 2N7002KTB_14

2N7002KTB_14

更新时间： 2024-11-22 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	270K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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数据手册

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2N7002KTB_14 数据手册

2N7002KTB

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=3

• R_DS(ON), V_GS@4.5V,I_DS@200mA=4

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

0.052(1.30)

0.043(1.10)

0.024(0.60)

0.019(0.50)

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

0.067(1.70)

0.059(1.50)

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.007(0.17)

0.002(0.07)

MECHANICAL DATA

• Case: SOT-523 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx. Weight: 0.00007 ounces, 0.002 grams

• Marking : 27

0.012(0.30)

0.004(0.10)

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

+20

115

800

Continuous Drain Current

Pulsed Drain Current

I_DM

T_A=25^OC

T_A=75^OC

200

150

Maximum Power Dissipation

P_D

^OC

Operating Junction and Storage Temperature Range

Junction-to Ambient Thermal Resistance(PCB mounted)²

T_J,T_STG

R_JA

-55 to + 150

883

^OC/W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

July 20,2012-REV.02

PAGE . 1

12 3 4 5 6 7

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