生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.55 |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.8 A | 最大漏源导通电阻: | 7.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7002L_10 | UTC | 60V, 115mA, N-CHANNEL MOSFET |
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2N7002L_12 | ONSEMI | Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 |
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2N7002L-AE2-R | UTC | 0.3A, 60V N-CHANNEL POWER MOSFET |
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2N7002L-AE3-R | SUPERTEX | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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2N7002L-AE3-R | UTC | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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2N7002LEADFREE | CENTRAL | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Met |
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