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2N7002KW PDF预览

2N7002KW

更新时间: 2024-11-21 12:51:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
6页 291K
描述
N-Channel Enhancement Mode Field Effect Transistor

2N7002KW 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.33
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.31 A
最大漏极电流 (ID):0.31 A最大漏源导通电阻:1.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002KW 数据手册

 浏览型号2N7002KW的Datasheet PDF文件第2页浏览型号2N7002KW的Datasheet PDF文件第3页浏览型号2N7002KW的Datasheet PDF文件第4页浏览型号2N7002KW的Datasheet PDF文件第5页浏览型号2N7002KW的Datasheet PDF文件第6页 
May 2011  
2N7002KW  
N-Channel Enhancement Mode Field Effect Transistor  
Features  
• Low On-Resistance  
• Low Gate Threshold Voltage  
• Low Input Capacitance  
• Fast Switching Speed  
• Low Input/Output Leakage  
• Ultra-Small Surface Mount Package  
• Pb Free/RoHS Compliant  
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101  
D
S
SOT-323  
G
Marking : 7KW  
Absolute Maximum Ratings * TA = 25°C unless otherwise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-Source Voltage  
Value  
60  
Units  
V
V
Gate-Source Voltage  
±20  
Maximum Drain Current  
- Continuous  
TJ = 100°C  
- Pulsed  
310  
195  
1.2  
mA  
mA  
A
TJ  
Operating Junction Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Total Device Dissipation  
Derating above TA = 25°C  
Value  
Units  
PD  
300  
2.4  
mW  
mW/°C  
RθJA  
Thermal Resistance, Junction to Ambient *  
410  
°C/W  
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size  
© 2011 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
2N7002KW Rev. A0  
1

2N7002KW 替代型号

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2N7002BKW NXP

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