是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.33 |
其他特性: | LOW THRESHOLD | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 0.31 A |
最大漏极电流 (ID): | 0.31 A | 最大漏源导通电阻: | 1.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N7002BKW | NXP |
功能相似 |
TRANSISTOR 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET G | |
2N7002PW | NXP |
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60 V, 0.3 A N-channel Trench MOSFET | |
2N7002WT1G | ONSEMI |
功能相似 |
Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7002KW_10 | PANJIT |
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60V N-Channel Enhancement Mode MOSFET - ESD Protected | |
2N7002KW_14 | PANJIT |
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60V N-Channel Enhancement Mode MOSFET - ESD Protected | |
2N7002KW_15 | SECOS |
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N-Ch Small Signal MOSFET with ESD Protection | |
2N7002KWA | MCC |
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Tape: 3K/Reel, 120K/Ctn.; | |
2N7002KW-AU | PANJIT |
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SOT-323 | |
2N7002KWBQ | MCC |
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Tape&Reel:3Kpcs/Reel; | |
2N7002KWF2 | YANGJIE |
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Small Signal Field-Effect Transistor, | |
2N7002KWHE3 | MCC |
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Tape: 3K/Reel, 120K/Ctn.; | |
2N7002KWT1 | WILLAS |
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380mA N-channel Small Signal MOSFET-60V | |
2N7002KW-TP | MCC |
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Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 1-Element, N-Channel, Silicon, Meta |