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2N7002BKW PDF预览

2N7002BKW

更新时间: 2024-11-21 21:21:19
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
16页 155K
描述
TRANSISTOR 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET General Purpose Small Signal

2N7002BKW 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:PLASTIC, SC-70, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.52
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.31 A
最大漏源导通电阻:1.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002BKW 数据手册

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2N7002BKW  
60 V, 310 mA N-channel Trench MOSFET  
Rev. 1 — 17 June 2010  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)  
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
1.2 Features and benefits  
„ Logic-level compatible  
„ Very fast switching  
„ Trench MOSFET technology  
„ ESD protection up to 2 kV  
„ AEC-Q101 qualified  
1.3 Applications  
„ Relay driver  
„ High-speed line driver  
„ Low-side loadswitch  
„ Switching circuits  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Tamb = 25 °C  
Tamb = 25 °C  
Min  
Typ  
Max  
60  
Unit  
V
VDS  
VGS  
ID  
drain-source voltage  
-
-
-
-
-
-
gate-source voltage  
drain current  
20  
V
[1]  
Tamb = 25 °C;  
VGS = 10 V  
310  
mA  
RDSon  
drain-source on-state  
resistance  
Tj = 25 °C;  
VGS = 10 V;  
ID = 500 mA  
-
1
1.6  
Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.  

2N7002BKW 替代型号

型号 品牌 替代类型 描述 数据表
2N7002KW FAIRCHILD

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N-Channel Enhancement Mode Field Effect Transistor

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Vdss (V) : 60 V;Id @ 25C (A) : 0.25 A;Rds-on (typ) (mOhms) : 1500 mOhms;Maximum Power Diss