2N7002DCSM
MECHANICAL DATA
Dimensions in mm (inches)
DUAL N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
1.40 ± 0.15
(0.055 ± 0.006)
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
FEATURES
2
1
6
3
4
• V
= 60V
(BR)DSS
A
0.23
5
rad.
(0.009)
Ω
= 7.5
• RDS
(ON)
1.27 ± 0.13
6.22 ± 0.13
(0.245 ± 0.005)
A =
(0.05 ± 0.005)
• I = 0.115A
D
CERAMIC
LCC2 PACKAGE
(underside view)
PAD 1 - Drain 1
PAD 2 - Gate 1
PAD 3 - Gate 2
PAD 4 - Drain 2
PAD 5 - Source 2
PAD 6 - Source 1
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
CASE
PER SIDE
TOTAL DEVICE
V
V
Drain – Source Voltage
Gate – Source Voltage
Drain Current
60V
DS
GS
±40V
±0.115A
0.8A
I
I
D
Pulsed Drain Current *
Power Dissipation
DM
P
200mW
400mW
D
Derate Above 25°C
1.60mW/°C 2.0mW/°C
–55 to 150°C
T
T
Operating Junction Temperature Range
Storage Temperature Range
j
–55 to 150°C
stg
R θJA
Thermal Resistance, Junction to Ambient
625°C/W 250°C/W
* Pulse width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6171
Issue 1
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Website: http://www.semelab.co.uk