October 2007
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant
SC70-6 (SOT363)
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1
Marking : 2N
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
60
Units
VDSS
Drain-Source Voltage
V
V
VDGR
VGSS
Drain-Gate Voltage RGS ≤ 1.0MΩ
60
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
ID
Drain Current
Continuous
Continuous @ 100°C
Pulsed
115
73
800
mA
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Derating above TA = 25°C
200
1.6
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient *
625
°C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size,
© 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. A
www.fairchildsemi.com
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