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2N7002DW1T1 PDF预览

2N7002DW1T1

更新时间: 2022-05-19 01:34:03
品牌 Logo 应用领域
威伦 - WILLAS /
页数 文件大小 规格书
4页 314K
描述
115 mAmps,60 Volts

2N7002DW1T1 数据手册

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WILLAS  
2N7002DW1T1  
Small Signal MOSFET115 mAmps,60 Volts  
N–Channel SOT-363  
We declare that the material of product are Halogen Free and  
compliance with RoHS requirements.  
ESD Protected:1000V  
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
3
2
1
Drain−Source Voltage  
V
DSS  
DGR  
D2  
G1  
S1  
Drain−Gate Voltage (R = 1.0 MW)  
V
60  
Vdc  
GS  
Drain Current  
− Continuous T = 25°C (Note 1)  
− Continuous T = 100°C (Note 1)  
I
I
±115  
±75  
±800  
mAdc  
D
D
C
I
DM  
C
− Pulsed (Note 2)  
Gate−Source Voltage  
− Continuous  
V
±20  
±40  
Vdc  
Vpk  
GS  
V
GSM  
− Non−repetitive (t 50 ms)  
p
S2  
G2  
D1  
4
5
6
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
Per Device  
FR5 Board (Note 1)  
P
380  
250  
mW  
D
ORDERING INFORMATION  
T = 25°C  
Derate Above 25°C  
A
Device  
Marking  
Shipping  
3.0  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
328  
q
JA  
2N7002DW1T1  
702  
3000 Tape & Reel  
Junction and Storage  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in  
2012-09  
WILLAS ELECTRONIC CORP.  

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