Datasheet > 2N7002DW1T1

2N7002DW1T1

更新时间： 2024-11-18 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	314K
描述
115 mAmps,60 Volts

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数据手册

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2N7002DW1T1 数据手册

WILLAS

2N7002DW1T1

Small Signal MOSFET115 mAmps,60 Volts

N–Channel SOT-363

We declare that the material of product are Halogen Free and

•

compliance with RoHS requirements.

• ^{ESD Protected:1000V}

•

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain−Source Voltage

DSS

DGR

D₂

G₁

S₁

Drain−Gate Voltage (R = 1.0 MW)

Vdc

Drain Current

− Continuous T = 25°C (Note 1)

− Continuous T = 100°C (Note 1)

±ꢀ115

±ꢀ75

±ꢀ800

mAdc

− Pulsed (Note 2)

Gate−Source Voltage

− Continuous

±ꢀ20

±ꢀ40

Vdc

Vpk

GSM

− Non−repetitive (t ≤ 50 ms)

S₂

G₂

D₁

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

FR−5 Board (Note 1)

380

250

ORDERING INFORMATION

T = 25°C

Derate Above 25°C

Device

Marking

Shipping

3.0

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

328

2N7002DW1T1

702

3000 Tape & Reel

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in

2012-09

WILLAS ELECTRONIC CORP.

12 3 4

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