Datasheet > 2N7002DW_11

2N7002DW_11

更新时间： 2024-11-18 07:29:15

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	184K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2N7002DW_11 数据手册

M C C

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20736 Marilla Street Chatsworth

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2N7002DW

Micro Commercial Components

Features

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

N-Channel MOSFET

Power Dissipation: 0.2W(Tamb=25?)

•

Drain Current: 115mA

Drain-source Voltage: 60V

Operating Junction Temperature: -55 to +150R

Storage Temperature: -55 to +150R

Marking: K72

SOT-363

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

V_(BR)DSS

Parameter

Drain-Source Breakdown Voltage*

(V_GS=0Vdc, I_D=10µAdc)

Gate-Threshold Voltage*

(V_DS=V_GS, I_D=250µAdc)

Min

Typ

Max

Units

---

Vdc

V_th(GS)

I_GSS

1.0

---

1.5

---

2.0

Vdc

Gate-body Leakage*

ꢀ10

500

nAdc

(V_DS=0Vdc, V_GS=ꢀ20Vdc)

I_DSS

Zero Gate Voltage Drain Current*

(V_DS=60Vdc, V_GS=0Vdc)

---

µAdc

Adc

Ω

(V_DS=60Vdc, V_GS=0Vdc, T_j=125R)

I_D(ON)

On-state Drain Current*

(V_DS=7.5Vdc, V_GS=10Vdc)

Drain-Source On-Resistance*

(V_GS=5Vdc, I_D=50mAdc)

(V_GS=10Vdc, I_D=500mAdc)

Forward Transconductance*

(V_DS=10Vdc, I_D=200mAdc)

0.5

1.0

---

r_DS(on)

---

3.2

4.4

7.5

13.5

g_FS

---

C_iss

C_OSS

C_rSS

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

---

V_DS=25Vdc,

V_GS=0Vdc

f=1MHz

---

DIMENSIONS

INCHES

Switching

DIM

MIN

.006

.045

.085

MAX

.014

.053

.096

MIN

0.15

1.15

2.15

MAX

0.35

1.35

2.45

NOTE

V_DD=30Vdc,

_GEN=10Vdc

R_L=150Ω,I_D=200mA,

R_G=25Ω

t_d(on)

t_d(off)

Turn-on Time

Turn-off Time

---

.026

0.65Nominal

.047

.071

---

.055

.087

.004

.043

.018

.006

1.20

1.80

---

1.40

2.20

0.10

1.10

0.46

0.15

* Pulse test, pulse widthꢁ300Is, duty cycleꢁ20%

.035

.010

.003

0.90

0.26

0.08

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Revision: A

2011/01/01

中文翻译

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