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2N7002C PDF预览

2N7002C

更新时间: 2024-11-22 17:01:35
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
6页 1083K
描述
Tape: 3K/Reel, 120K/Ctn.;

2N7002C 数据手册

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2N7002C  
Features  
• Trench Power MV MOSFET Technology  
• Fast Switching Speed  
• Moisture Sensitivity Level 1  
• Halogen Free. “Green” Device (Note 1)  
N-Channel  
MOSFET  
• Epoxy Meets UL 94 V-0 Flammability Rating  
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
Operating Junction Temperature Range : -55°C to +150°C  
Storage Temperature Range: -55°C to +150°C  
SOT-23  
Thermal Resistance: 150°C/W Junction to Ambient (Note 2)  
A
D
Parameter  
Rating  
60  
Symbol  
VDS  
Unit  
V
3
Drain-Source Voltage  
Gate-Source Volltage  
B
C
VGS  
±20  
350  
220  
1.4  
V
1
2
F
TA=25°C  
E
mA  
ID  
Continuous Drain Current  
Pulsed Drain Current (Note 3)  
TA=100°C  
H
G
J
IDM  
PD  
A
L
Total Power Dissipation (Note 4)  
830  
K
mW  
Note:  
DIMENSIONS  
MM  
INCHES  
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,  
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.  
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.  
DIM  
NOTE  
MIN MAX MIN MAX  
0.110 0.120 2.80 3.04  
0.083 0.104 2.10 2.64  
0.047 0.055 1.20 1.40  
0.034 0.041 0.85 1.05  
0.067 0.083 1.70 2.10  
0.018 0.024 0.45 0.60  
A
B
C
D
E
F
Copper, in a still air environment with TA =25°C.  
3. Repetitive rating; pulse width limited by max. junction temperature.  
4. PD is based on max. junction temperature, using junction-ambient thermal resistance.  
G
H
J
K
L
0.01 0.15  
0.0004 0.006  
0.035 0.043 0.90 1.10  
0.003 0.007 0.08 0.18  
0.012 0.020 0.30 0.51  
0.020  
0.50  
0.007  
0.20  
Suggested Solder Pad Layout  
Internal Structure and Marking Code  
0.031  
0.800  
D
0.035  
0.900  
D
1. GATE  
0.079  
2.000  
inches  
mm  
2. SOURCE  
3. DRAIN  
7002C.  
G
S
G
0.037  
0.950  
S
0.037  
0.950  
Rev.4-1-07172023  
1/6  
MCCSEMI.COM  

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