Datasheet > 2N7002D

2N7002D

更新时间： 2022-02-26 14:38:32

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描述
60V N-Channel MOSFET

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2N7002D 数据手册

2N7002D

Chip Integration Technology Corporation

60V N-Channel MOSFET

N-Channel MOSFET – ESD Protected

Features:

(SOT-23)

Top View

● Simple Drive Requirement

● Small Package Outline

● ROHS Compliant

● ESD Rating = 2000V HBM

Applications:

●

High density cell design for low R_DS(ON)

Voltage controlled small signal switching.

Rugged and reliable.

High saturation current capability.

High-speed switching.

Not thermal runaway.

The soldering temperature and time shall

not exceed 260℃ for more than 10 seconds.

GENERAL DESCRIPTION

The 2N7002D is the N-Channel logic enhancement mode power

ﬁeld eﬀect transistors are produced using high cell density , DMOS

trench technology. This high density process is especially tailored to

minimize on-state resistance. These devices are particularly suited

for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits

where high-side switching , and low in-line power loss are needed in

a very small outline surface mount package.

Absolute Maximum Ratings(TA=25℃ Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Symbol

Ratings

Unit

V_DS

V_GS

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current (Note 1)

I_D

300

I_DM

2000

0.35

P_D@T_A=25?C

P_D@T_A=75?C

T_J, Tstg

Maximum Power Dissipation

℃

0.21

Operating Junction and Storage Temperature Range

Junction-to-Ambient Thermal Resistance

(PCB mounted) (Note 2)

-55 ~ 150

R_θJA

357

℃/W

Document ID : DS-22M85

Revised Date : 2017/08/14

Revision : C

12 3 4 5 6

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