Datasheet > 2N7002DW

2N7002DW

更新时间： 2024-11-26 14:53:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1891K
描述
SOT-363

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中文翻译

获取价格

数据手册

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2N7002DW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate MOSFETs

2N7002DW Dual N-channel MOSFET

V_(BR)DSSR_DS(on)MAX

I_D

SOT-363

10V

115m

APPLICATION

FEATURE

High density cell design for low R_DS(ON)

Voltage controlled small signal switch

Rugged and reliable

Load Switch for Portable Devices

DC/DC Converter

High saturation current capability

Equivalent Circuit

MARKING

K72

K72=Device code

Solid dot1=Pin1 indicator

Solid dot2= Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_DS

Parameter

Value

Unit

Drain-Source voltage

V_GS

I_D

Gate-Source voltage

Drain Current

±20

115

P_D

Power Dissipation

150

Thermal Resistance from Junction to Ambient

Junction Temperature

R_ӨJA

T_J

833

℃/W

℃

150

T_stg

Storage Temperature

-55-150

℃

Rev - 1.1

www.jscj-elec.com

12 3 4 5

中文翻译

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2N7002DW_1	PANJIT	获取价格	60V N-Channel Enhancement Mode MOSFET
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