2N7002DSPT

更新时间： 2024-11-25 05:57:15

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
5页	230K
描述
Dual N-Channel Enhancement MOS FET

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中文翻译

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数据手册

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2N7002DSPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2N7002DSPT

SURFACE MOUNT

Dual N-Channel Enhancement MOS FET

VOLTAGE 50 Volts CURRENT 0.51 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

FEATURE

* Small surface mounting type. (SC-74/SOT-457)

SC-74/SOT-457

* High density cell design for low R^DS(ON)

* Suitable for high packing density.

* Rugged and reliable.

(1)

(3)

(6)

* High saturation current capability.

* Voltage controlled small signal switch.

0.95

1.7~2.1

2.7~3.1

(4)

CONSTRUCTION

* Dual N-Channel Enhancement

MARKING

0.25~0.5

1.4~1.8

* 72DS

0.08~0.2

0.935~1.3

0~0.15

0.3~0.6

2.6~3.0

CIRCUIT

SC-74/SOT-457

Dimensions in millimeters

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

2N7002DSPT

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage (R_GS< 1 M

)

Ω

±20

Gate-Source Voltage - Continuous

510

1500

960

I_D

Maximum Drain Current - Continuous

- Pulsed

TA= 25°C

TA= 70°C

TA= 25°C

P_D

Maximum Power Dissipation

TA= 70°C

900

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300

°C

Thermal characteristics

Thermal Resistance, Junction-to-Ambient

130

°C/W

2004-7

θJA

θJC

Thermal Resistance, Junction-to-Case

12 3 4 5

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