Datasheet > 2N7002BW

2N7002BW

更新时间： 2024-04-09 18:59:57

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	667K
描述
SOT-323

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数据手册

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2N7002BW 数据手册

RoHS

COMPLIANT

2N7002BW

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

350mA

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜1000mΩ

＜1400mΩ

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±30

350

T_A=25℃

Drain Current

I_D

221

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^B

I_DM

250

T_A=25℃

P_D

℃

100

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

■Thermal resistance

Parameter

Symbol

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^C

Steady-State

R_θJA

420

500

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

2N7002BW

72B.

3000

30000

120000

7“ reel

1 / 8

S-E397

Rev.1.0,14-Sep-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

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