是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
风险等级: | 5.21 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.3 A |
最大漏源导通电阻: | 3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 3 pF | JESD-30 代码: | R-PDSO-G6 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N7002DWL6327 | INFINEON |
完全替代 |
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal | |
2N7002DWH6327 | INFINEON |
类似代替 |
OptiMOS⢠Small-Signal-Transistor | |
2N7002DW-7-F | DIODES |
功能相似 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7002DW_05 | PANJIT |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS | |
2N7002DW_08 | PANJIT |
获取价格 |
60V N-Channel Enhancement Mode MOSFET | |
2N7002DW_1 | PANJIT |
获取价格 |
60V N-Channel Enhancement Mode MOSFET | |
2N7002DW_10 | DIODES |
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DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002DW_11 | MCC |
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N-Channel MOSFET | |
2N7002DW_12 | UTC |
获取价格 |
300mA, 60V DUAL N-CHANNEL POWER MOSFET | |
2N7002DW_14 | PANJIT |
获取价格 |
60V N-Channel Enhancement Mode MOSFET | |
2N7002DW_15 | DIODES |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7002DW_15 | UTC |
获取价格 |
DUAL POSITIVE-EDGETRIGGERED D-TYPE FLIP-FLOPS | |
2N7002DW_17 | DIODES |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |