Datasheet > 2N7002DW

2N7002DW

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	1659K
描述
SOT-363

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中文翻译

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数据手册

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2N7002DW 数据手册

2N7002DW

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

SOT-363



Low on-resistance:V_DS=60V,I_D=300mA,R_DS(ON)≤1.9Ω@V_GS=10V

High density cell design for low R_DS(ON)

Voltage controlled small signal switch

High saturation current capability

Rugged and reliable

ESD Protection

MOSFET1: 1,2,6

MOSFET2: 3,4,5

MECHANICAL DATA



Case: SOT-363

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)



Marking: K72

MAXIMUM RATINGS T_A= 25°C unless otherwise noted

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above

the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions

may affect device reliability.

Symbol

Parameter

Rating

Unit

Common Ratings (T^A=25°C Unless Otherwise Noted)

V_GS

Gate-Source Voltage

±12

Drain-Source Breakdown Voltage

Maximum Junction Temperature

Storage Temperature Range

(BR)DSS

T_J

150

°C

T_STG

-50 to 150

Mounted on Large Heat Sink

I_DM

=25°C

=70°C

=25°C

=70°C

T_A

0.8

0.3

Pulse Drain Current Tested①

I_D

Continuous Drain Current

0.24

0.3

P_D

Maximum Power Dissipation

0.2

R_JA

Thermal Resistance Junction-Ambient

400

°C/W

1 / 6

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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