2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT-323 Package
D
3
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K72
1
2
G
S
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol
VDS
Limit
Units
V
60
Gate-Source Voltage
VGS
ID
+20
115
800
V
Continuous Drain Current
mA
mA
1)
Pulsed Drain Current
IDM
TA=25OC
TA=75OC
200
120
Maximum Power Dissipation
PD
TJ,TSTG
RθJA
mW
OC
Operating Junction and Storage
Temperature Range
-55 to + 150
625
Junction-to Ambient Thermal
Resistance(PCB mounted)2
OC/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 21.2010-REV.01
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